BUK9535-55A,127

Description：MOSFET N-CH 55V 34A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:065eb6518c2d Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 34A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1173 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：85W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK9535-55A,127

Overview

The BUK9535-55A,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It is designed for automotive critical applications and general purpose power switching. The device features a TO-220AB plastic package with a mounting base connected to the drain. Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 34 A at 25 °C mounting base temperature, and a total power dissipation of 85 W. The typical on-state resistance is 24 mΩ at VGS=10V and 26 mΩ at VGS=5V, both measured at ID=25A and Tj=25°C. Non-repetitive avalanche energy is rated at 49 mJ.

Feature Summary

Logic level gate drive capability enabling efficient control at low gate-source voltages.
Automotive qualification ensuring reliability in critical vehicle applications.
Low conduction losses achieved through minimized on-state resistance.

Applications

Automotive power switching circuits
General purpose power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains active or check for end-of-life notifications prior to final design approval. Ensure all thermal management requirements align with the specified junction-to-mounting base thermal resistance values provided in the datasheet.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade N-channel MOSFETs with logic-level gate compatibility. Consider the TO-220AB package constraints for heatsinking and mechanical mounting. Evaluate the safe operating area curves to ensure operation remains within limits during peak current transients and varying drain-source voltage conditions.

Part Context

This part belongs to the Nexperia (formerly NXP) BUK95 series of TrenchMOS logic level FETs. These devices are engineered for high-performance switching applications where low on-resistance and ruggedness are required. The TO-220AB package provides a standardized form factor suitable for through-hole mounting and direct heatsink attachment.

Replacement Considerations

Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pinout compatibility; verify electrical ratings and thermal characteristics match the original design requirements.