BUK953R2-40B,127

$0.97

Description：MOSFET N-CH 40V 100A TO220AB
Series：*
Mfr：Nexperia USA Inc.
Package：Tube

SKU:9c47ad1db421 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A TO220AB
Series：*
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK953R2-40B,127

Overview

The BUK953R2-40B is an N-channel TrenchMOS logic level FET in a TO-220AB package. It features a drain-source voltage of 40 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device has a maximum total power dissipation of 300 W. Typical on-state resistance is 2.4 mΩ at VGS=10 V and 2.7 mΩ at VGS=5 V, both at ID=25 A and 25 °C. Total gate charge is typically 94 nC. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated for 1.2 J.

Feature Summary

AEC-Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and compliance status. Ensure the component meets the required AEC-Q101 qualification standards for the intended automotive application. Confirm thermal management requirements align with the specified junction-to-mounting base thermal resistance characteristics provided in the datasheet.

Selection Notes

Select this component for high-current switching applications requiring logic-level gate drive compatibility. The TO-220AB package facilitates heatsink mounting for effective thermal management. Consider the 175 °C junction temperature capability for operation in high-temperature environments. Evaluate the avalanche energy rating if unclamped inductive switching scenarios are present in the circuit design.

Part Context

This part belongs to the Nexperia (formerly NXP Semiconductors) BUK95 series of N-channel enhancement mode Field-Effect Transistors. Utilizing TrenchMOS technology, these devices are designed for robust performance in power switching applications. The BUK953R2-40B specifically targets automotive and industrial markets where reliability under thermal stress is critical.