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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：95 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：10220 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The Nexperia BUK954R2-55B is an N-channel TrenchMOS logic level FET designed for automotive critical applications. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 3.5 mΩ at VGS=5V and 25 °C. Total power dissipation reaches 300 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy handling of 1.2 J.
Feature Summary
- Low conduction losses due to low on-state resistance
- AEC-Q101 compliant for automotive critical applications
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status and REACH registration details prior to integration. Ensure thermal management design accounts for the TO-220AB package characteristics and mounting base temperature dependencies specified in the datasheet.
Selection Notes
Select this component for high-current switching applications requiring automotive qualification. The logic level gate drive capability simplifies driver circuit design. Evaluate thermal performance based on the mounting base temperature curves provided in the datasheet. Consider the 55 V drain-source voltage rating when designing for 12 V or 24 V automotive systems.
Part Context
This part belongs to the Nexperia TrenchMOS family, utilizing trench technology for enhanced performance. It is manufactured by Nexperia USA Inc. (formerly NXP Semiconductors). The product data sheet revision 03 was released on June 8, 2010. The device is housed in a TO-220AB plastic single-ended package with a heatsink mount.
Replacement Considerations
Check for direct substitutes within the BUK95_964R2_55B series or other Nexperia TrenchMOS logic level FETs with matching 55 V and 75 A ratings. Verify pinout compatibility and thermal resistance values before substitution.
