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Product Detailed Parameters
- Description：MOSFET N-CH 100V 23A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：72mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：1704 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：99W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9575-100A,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. It is qualified to AEC-Q101 standards for automotive applications. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 23 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 72 mΩ at VGS=10V and 75 mΩ at VGS=5V. Total power dissipation is rated at 98 W. Thermal resistance from junction to mounting base is 1.5 K/W, with an operating junction temperature range of -55 °C to +175 °C.
Feature Summary
- Logic-level gate drive compatibility enabling efficient switching with standard logic signals.
- Automotive qualification compliant with AEC-Q101 standards for critical applications.
- Low conduction losses achieved through optimized TrenchMOS on-state resistance.
Applications
- Automotive power switching systems
- General purpose power switching circuits
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with logic-level gate drive capabilities. The TO-220AB package facilitates heatsink mounting for high-power dissipation scenarios. Ensure the application operates within the specified 100 V drain-source voltage limit and manages thermal resistance effectively to maintain junction temperatures below 175 °C during peak load conditions.
Part Context
This part belongs to Nexperia's TrenchMOS family of logic level N-channel FETs. It represents a design optimized for automotive reliability and general-purpose high-current switching. The TO-220AB package provides a standardized mechanical interface for through-hole mounting and external heatsinking, distinguishing it from surface-mount variants in the same electrical class.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings against existing designs before considering alternative manufacturers.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The maximum non-repetitive drain-source avalanche energy (EDS(AL)S) is 100 mJ under specified conditions of ID = 14.2 A and Vsup ≤ 25 V.
How does the on-state resistance vary with gate-source voltage?
At VGS = 10 V, the maximum RDS(on) is 72 mΩ. At VGS = 5 V, the maximum RDS(on) increases to 75 mΩ, demonstrating its suitability for logic-level driving while maintaining low resistance.
