BUK9606-55A,118

$3.52

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8bc5c4de5df8 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：8600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9606-55A,118

Overview

The BUK9606-55A,118 is an N-channel TrenchMOS logic level FET in a SOT404 (D2PAK) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C. The device exhibits low on-state resistance, typically 4.8 mΩ at VGS=10V and 6.3 mΩ at VGS=5V. Total power dissipation reaches 300 W at 25 °C mounting base temperature. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy handling of 1.1 J.

Feature Summary

Low conduction losses due to low on-state resistance
Q101 compliant for automotive critical applications
Suitable for logic level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when logic-level gate drive compatibility is required alongside high current handling in automotive or industrial settings. The D2PAK package provides robust thermal performance for power switching applications. Ensure the design accounts for the 75 A package-limited current and the 55 V voltage rating under expected operating temperatures.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode Field-Effect Transistors. It utilizes advanced trench technology to achieve low on-resistance and high efficiency. The product is designed and qualified according to AEC standards, making it suitable for critical automotive applications where reliability and thermal stability are paramount.

Replacement Considerations

Check datasheet revision history for potential superseding documents. Verify pinout compatibility with SOT404 packages. Confirm electrical parameters match application requirements before substitution.