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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：32 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：3600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：157W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9609-40B is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor (FET) designed for automotive critical applications. It operates with a drain-source voltage of 40 V and supports continuous drain currents up to 75 A at 25 °C mounting base temperature, limited by the package. The device features low on-state resistance, typically 6.27 mΩ at VGS = 10 V and 7.69 mΩ at VGS = 5 V, both measured at ID = 25 A and Tj = 25 °C. Total power dissipation reaches 157 W at 25 °C. It withstands junction temperatures up to 175 °C and offers non-repetitive avalanche energy of 241 mJ.
Feature Summary
- Logic level gate drive compatibility suitable for standard logic sources
- Automotive qualification compliant with Q101 standards
- High thermal stability supporting operation in thermally demanding environments up to 175 °C
- Low conduction losses enabled by optimized TrenchMOS technology
Applications
- 12 V load switching systems
- Automotive electronic control units and modules
- General purpose power switching circuits
- Motor, lamp, and solenoid drive applications
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component meets current automotive reliability standards relevant to your target market. Check for any recent revision updates to the datasheet to ensure design parameters remain accurate. Ensure supply chain channels are authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with logic-level gate drive capability. It is appropriate for applications where low on-resistance reduces heat generation. Consider the D2PAK package constraints for thermal management and current handling. Evaluate the 40 V rating against system voltage spikes to ensure adequate margin.
Part Context
This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench gate technology to minimize on-state resistance. It is specifically engineered for high-current automotive applications, distinguishing itself from general-purpose industrial FETs through its rigorous qualification for critical vehicle systems and extended temperature range capabilities.
Replacement Considerations
Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on electrical parameter similarity without confirming package compatibility and automotive qualification status.
