BUK9611-80E,118

$2.06

Description：MOSFET N-CH 80V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6c5da2fc8087 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：48.8 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：7149 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：182W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information

BUK9611-80E,118

Overview

The BUK9611-80E is an N-channel TrenchMOS logic level FET in a SOT404 package. It features a drain-source voltage of 80 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device has a maximum total power dissipation of 182 W. Static characteristics include a typical drain-source on-state resistance of 8.3 mΩ at VGS = 5 V and ID = 20 A. Dynamic parameters show a typical total gate charge of 48.8 nC and a gate-drain charge of 16 nC. The junction temperature range spans from -55 °C to 175 °C.

Feature Summary

AEC Q101 compliant for automotive applications
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C

Applications

12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component status aligns with current production schedules as defined by Nexperia. Ensure design compatibility with the specified thermal management requirements for the target application environment.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high current handling capabilities within a compact surface-mount footprint. Evaluate the thermal resistance characteristics against the expected operating conditions to ensure junction temperatures remain within safe limits during peak load scenarios.

Part Context

This part belongs to the BUK96 series of N-channel MOSFETs utilizing TrenchMOS technology. It is designed specifically for high-performance automotive applications, offering enhanced ruggedness and efficiency compared to standard general-purpose devices. The SOT404 package provides a balance between power density and thermal performance suitable for various vehicle subsystems.