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Product Detailed Parameters
- Description：MOSFET N-CH 55V 13A D2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：137mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：339 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：53W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK96150-55A,118 is an N-channel enhancement mode logic level field-effect power transistor manufactured by Nexperia. It utilizes TrenchMOS technology to achieve very low on-state resistance. The device is available in TO220AB and SOT404 plastic envelopes. Key electrical parameters include a drain-source voltage of 55 V, a continuous DC drain current of 13 A at 25 °C case temperature, and a total power dissipation of 53 W. The maximum junction temperature is rated at 175 °C.
Feature Summary
- Logic level gate drive capability for direct interfacing with standard logic circuits
- TrenchMOS technology providing minimized on-state resistance
- High thermal stability supporting operation up to 175 °C junction temperature
Applications
- Automotive switching applications
- General purpose power switching
- Low voltage motor control
Procurement Notes
Verify the manufacturer designation carefully, as the datasheet originates from Philips Semiconductors while the component is currently distributed under the Nexperia brand. Confirm that the specific ordering suffix matches the required package variant (TO220AB or SOT404) before finalizing procurement orders.
Selection Notes
Select this component when a robust N-channel MOSFET with low RDS(on) is required for automotive or general switching environments. Ensure the application voltage remains within the 55 V limit and verify that the gate drive signal meets the logic level requirements for optimal conduction performance.
Part Context
This part belongs to the BUK95/BUK96 series of TrenchMOS transistors. The 'BUK96' designation specifically indicates the logic level variant, distinguishing it from the standard threshold devices in the same family. These components are designed for high-efficiency power management in compact form factors.
Replacement Considerations
The BUK95150-55A serves as a functional equivalent within the same product specification document. Verify pinout compatibility and thermal resistance characteristics when substituting between the standard and logic level variants.
