BUK96180-100A,118

$0.77

Description：MOSFET N-CH 100V 11A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8d4f91b07289 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 11A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：619 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：54W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK96180-100A,118

Overview

The BUK96180-100A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Qualified to AEC-Q101 standards for automotive critical applications, it features a drain-source voltage of 100 V and a continuous drain current of 11 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 152 mΩ at VGS=10V and 173 mΩ max at 25 °C, ensuring reduced conduction losses. It supports a junction temperature up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings.

Feature Summary

Logic-level gate drive compatibility for direct interface with standard control circuits
Automotive qualification compliant with AEC-Q101 reliability standards
Enhanced thermal performance suitable for demanding environments with 175 °C junction rating
Low on-state resistance minimizing power dissipation during conduction

Applications

Automotive power switching systems
General purpose power switching
Motor, lamp, and solenoid control loads

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring logic-level gate drive capability within an automotive or high-reliability general-purpose environment. The D2PAK package provides robust thermal dissipation capabilities essential for managing power loss in space-constrained PCB layouts. Ensure gate drive voltages align with the specified threshold characteristics to maintain optimal on-state resistance performance across the operating temperature range.

Part Context

This part belongs to Nexperia's BUK9 series of N-channel TrenchMOS logic level FETs. These devices are engineered for high-performance switching applications where low conduction losses and reliable operation under automotive stress conditions are required. The series utilizes advanced trench gate technology to achieve superior electrical characteristics compared to standard planar MOSFETs.