BUK961R7-40E,118

$2.13

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:96699eea01a1 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：1.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：105.4 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：15010 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：324W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK961R7-40E,118

Overview

The BUK961R7-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology within a SOT404 (D2PAK) package. Designed for high-performance automotive applications, it meets the AEC-Q101 standard. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device features a maximum total power dissipation of 324 W and a typical on-state resistance of 1.35 mΩ at 25 °C. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

AEC-Q101 compliant for automotive reliability
Repetitive avalanche rated for robustness
Suitable for thermally demanding environments with 175 °C rating
True logic level gate operation

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix and packaging configuration against the manufacturer's latest documentation before procurement. Confirm that the component status remains in production or active lifecycle phase. Ensure compatibility with the intended thermal management solution given the D2PAK package constraints. Cross-reference the marking code to validate authenticity upon receipt.

Selection Notes

Select this component for applications requiring low on-state resistance and high current handling in automotive environments. Consider the 175 °C junction temperature capability for high-thermal-stress designs. Evaluate the repetitive avalanche rating if inductive load switching is present. Ensure the gate drive voltage aligns with the true logic level threshold characteristics for optimal efficiency.

Part Context

This part belongs to the Nexperia BUK96 series of N-channel TrenchMOS logic level FETs. The series is characterized by advanced trench gate technology designed for automotive-grade reliability. The SOT404 package provides efficient thermal dissipation suitable for surface-mount assembly. The product line focuses on high-performance power switching solutions for modern vehicle electrical architectures.

Replacement Considerations

Direct replacements must match the 40 V drain-source voltage, 120 A continuous current, and SOT404 package outline. Verify equivalent on-state resistance and thermal resistance values. Check for identical AEC-Q101 qualification status if automotive compliance is required. Confirm pinout compatibility as Drain, Gate, and Source assignments.