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Product Detailed Parameters
- Description：MOSFET N-CH 100V 63A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：53.4 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：5657 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：203W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9620-100B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. Designed for automotive critical applications, it complies with AEC-Q101 standards. The device features a drain-source voltage of 100 V and a continuous drain current of 63 A at 25 °C mounting base temperature. It exhibits low on-state resistance, typically 16.4 mΩ at VGS = 4.5 V and ID = 25 A. Total power dissipation reaches 203 W at 25 °C. The component supports junction temperatures up to 175 °C and includes non-repetitive avalanche energy capability of 222 mJ.
Feature Summary
- AEC-Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm package variant and tape/reel specifications. Confirm RoHS compliance status and lead time requirements directly with authorized distributors or Nexperia sales offices prior to procurement. Ensure design compatibility with the SOT404 (D2PAK) footprint and thermal management constraints specified in the datasheet.
Selection Notes
Select this component for high-current switching applications requiring logic-level gate drive compatibility. The low RDS(on) minimizes conduction losses in power paths. Verify that the application's thermal environment allows for operation within the 175 °C junction temperature limit. Ensure gate drive voltages align with the threshold characteristics for optimal performance at the intended load currents.
Part Context
This part belongs to the Nexperia BUK96 series of N-channel TrenchMOS logic level FETs. These devices are engineered for robust performance in automotive systems where reliability under thermal stress is critical. The D2PAK package provides efficient heat dissipation through the mounting base, supporting high power dissipation capabilities required for heavy-duty switching tasks.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and electrical parameters such as VDS, ID, and RDS(on) when evaluating potential replacements to ensure functional equivalence in existing designs.
