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The BUK9628-55A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it operates with a drain-source voltage of 55 V and supports continuous drain currents up to 42 A at 25 °C mounting base temperature. The device features low on-state resistance, typically 22 mΩ at VGS = 10 V and ID = 15 A, ensuring minimal conduction losses. It includes an exposed heatsink for thermal management and is qualified to AEC-Q101 standards.
Verify the specific ordering suffix matches the required tape-and-reel or cut-tape configuration. Confirm that the D2PAK footprint aligns with the PCB design guidelines provided in the package outline documentation. Ensure thermal interface materials are compatible with the exposed mounting base connection to the drain terminal for effective heat dissipation during operation.
Select this component when low on-state resistance is critical for efficiency in 55 V logic-level applications. The D2PAK package provides robust current handling capabilities suitable for high-power density designs. Consider the thermal resistance characteristics and ensure adequate copper area on the printed-circuit board to maintain junction temperatures within the specified limits under maximum load conditions.
This device belongs to Nexperia's TrenchMOS family, which employs advanced trench gate technology to enhance performance. The BUK9628-55A is specifically engineered for automotive environments, meeting rigorous qualification standards. It serves as a high-current switch solution where low gate charge and fast switching speeds are required alongside high thermal stability.
BUK9528-55A