BUK962R1-40E,118

$1.03

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:32fcacb54c55 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：87.8 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：13.16 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：293W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK962R1-40E,118

Overview

The BUK962R1-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in a D2PAK (SOT404) plastic surface-mounted package. Designed for high-performance automotive applications, it meets AEC-Q101 standards and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 120 A at 25 °C mounting base temperature, and a total power dissipation of 293 W. The device features a typical on-state resistance of 1.7 mΩ at VGS = 5 V and ID = 25 A, with a gate-source threshold voltage greater than 0.5 V at 175 °C.

Feature Summary

AEC-Q101 compliant for automotive reliability
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with low threshold voltage at elevated temperatures

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package variant and marking code alignment. Confirm that the component status remains active or production-relevant for your design timeline. Check for any recent Product Change Notifications regarding labeling or assembly location changes that may affect integration or regulatory compliance requirements.

Selection Notes

Select this component when designing circuits requiring high current handling in a compact D2PAK footprint. The logic level gate drive capability simplifies driver circuit design, particularly at elevated junction temperatures. Ensure thermal management strategies account for the specified thermal resistance values to maintain junction temperature within safe operating limits during peak load conditions.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode field-effect transistors. It represents an evolution from previous NXP Standard Product lines, maintaining compatibility with established automotive qualification standards. The D2PAK package provides a balance between power handling capacity and surface-mount convenience for industrial and automotive PCB layouts.

Replacement Considerations

Direct substitutes must match the 40V/120A rating, D2PAK (SOT404) package, and AEC-Q101 qualification. Verify pinout compatibility and thermal characteristics before substitution.