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Product Detailed Parameters
- Description：MOSFET N-CH 60V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：92 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：15600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：324W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK962R8-60E,118 is an N-channel TrenchMOS logic level FET manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology within a SOT404 (D2PAK) plastic surface-mounted package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 60 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device features a typical on-state resistance of 2.29 mΩ at VGS = 5 V and ID = 25 A. It supports junction temperatures up to 175 °C with a total power dissipation of 324 W.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Repetitive avalanche rated for robustness
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with VGS(th) rating greater than 0.5V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring low conduction losses in automotive environments. The true logic level gate drive capability allows direct interfacing with standard logic outputs without additional level shifting. Ensure thermal management strategies account for the 175 °C junction temperature limit and the specific thermal resistance characteristics provided in the datasheet to maintain reliability under load.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs. The BUK962R8-60E specifically targets high-current, low-resistance applications where space constraints favor the D2PAK package. It complements other devices in the series by offering optimized trade-offs between on-state resistance and gate charge for efficient power switching in vehicle electrical architectures.
Replacement Considerations
Direct replacements must match the 60 V rating, 120 A current capacity, and SOT404 package. Verify that substitute parts also meet AEC-Q101 requirements if used in automotive contexts. Check pinout compatibility and ensure thermal resistance values are comparable to avoid overheating issues in existing PCB layouts.
