BUK9635-55,118

Description：MOSFET N-CH 55V 34A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)

SKU:525ca9b8006f Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 34A D2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：35mOhm @ 17A, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：85W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9635-55,118

Overview

The BUK9635-55,118 is an N-channel enhancement mode logic level field-effect power transistor manufactured by NXP USA Inc. utilizing TrenchMOS technology in a SOT404 plastic envelope. It features a drain-source voltage of 55 V and a DC drain current of 34 A at 25 °C. The device exhibits a maximum on-state resistance of 35 mΩ at VGS = 5 V. Total power dissipation reaches 85 W at 25 °C with a junction temperature limit of 175 °C. Integral zener diodes provide ESD protection up to 2 kV.

Feature Summary

TrenchMOS technology for low on-state resistance
Logic level gate drive capability
Integrated ESD protection via zener diodes

Applications

Automotive switching applications
General purpose switching applications

Procurement Notes

Verify the component against the Philips Semiconductors product specification document dated April 1998. Confirm the package type matches SOT404 requirements for surface mounting. Ensure design parameters remain within absolute maximum ratings for voltage, current, and thermal limits to maintain reliability.

Selection Notes

Select this component for circuits requiring high current handling with logic-level gate control. Evaluate thermal management strategies based on the specified junction-to-mounting base thermal resistance. Consider the 55 V breakdown voltage when designing for automotive or general switching environments.

Part Context

This part belongs to the TrenchMOS family of N-channel enhancement mode transistors. It is designed as a surface-mount solution suitable for replacing older through-hole technologies in compact designs. The SOT404 package facilitates efficient heat transfer to the mounting base.