BUK9637-100E,118

$1.40

Description：MOSFET N-CH 100V 31A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:941103dcf022 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 31A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：36mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：22.8 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：2681 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：96W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9637-100E,118

Overview

The BUK9637-100E is an N-channel TrenchMOS logic level FET in a SOT404 (D2PAK) package, qualified to AEC-Q101 for automotive use. It features a drain-source voltage of 100 V and a continuous drain current of 31 A at 25 °C mounting base temperature. The on-state resistance is typically 31 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation reaches 96 W. Thermal resistance from junction to mounting base is 1.56 K/W. Gate threshold voltage exceeds 0.5 V at 175 °C.

Feature Summary

AEC Q101 compliant for high performance automotive applications
Repetitive avalanche rated for ruggedness
Suitable for thermally demanding environments with a 175 °C rating
True logic level gate operation with low threshold voltage at elevated temperatures

Applications

12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains in production rather than development or preliminary phases before finalizing design-in decisions. Cross-reference the marking code with the datasheet to validate authenticity upon receipt.

Selection Notes

Select this device for designs requiring true logic level drive capability at high junction temperatures up to 175 °C. The SOT404 package provides robust thermal performance suitable for high current applications. Ensure the gate drive voltage meets the minimum requirements for optimal RDS(on) performance under varying load conditions.

Part Context

This component belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology for low on-state resistance. It is specifically engineered for automotive environments where reliability and thermal stability are critical. The part integrates internal diode characteristics and avalanche ruggedness to support demanding power switching tasks.