BUK963R3-60E,118

$3.25

Description：MOSFET N-CH 60V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:93a55434e769 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：13490 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：293W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information

BUK963R3-60E,118

Overview

The BUK963R3-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology in a D2PAK (SOT404) package. It features a drain-source voltage of 60 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 2.73 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 293 W under specified conditions, with a junction temperature range from -55 °C to 175 °C.

Feature Summary

AEC Q101 compliant for automotive applications
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating greater than 0.5V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component status remains active as production data sheets may be superseded by newer revisions. Ensure the requested quantity aligns with standard packaging constraints provided by Nexperia or authorized distributors.

Selection Notes

Select this component for high-current switching applications requiring low on-state resistance and robust thermal performance. The true logic level gate drive capability allows efficient operation with standard logic signals even at elevated temperatures. Verify that the application's peak current and thermal dissipation requirements fall within the safe operating area defined in the datasheet.

Part Context

This part belongs to the BUK963 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia USA Inc. The series is designed for high-performance automotive applications, offering enhanced ruggedness through repetitive avalanche rating and extended temperature capabilities up to 175 °C.