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The BUK965R4-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology in a SOT404 (D2PAK) package. Designed for high-performance automotive applications, it meets the AEC-Q101 standard. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device features a maximum total power dissipation of 137 W and a typical on-state resistance of 4.3 mΩ at VGS = 5 V. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Confirm that the component status remains active or qualified for new designs before finalizing procurement plans. Ensure compliance with RoHS directives and check for any recent product change notices affecting manufacturing locations or materials.
Select this component when low on-state resistance is required at logic-level gate voltages within a 40 V system. The D2PAK package provides robust thermal performance for high-current applications. Verify that the application environment does not exceed the specified junction temperature limits and that avalanche energy requirements fall within the single-pulse ratings defined in the datasheet.
This part belongs to the Nexperia BUK9 series of N-channel TrenchMOS logic level FETs. These devices are engineered for automotive-grade reliability and efficiency. The SOT404 package offers a compact surface-mount solution suitable for PCB layouts requiring high current handling and efficient heat dissipation through the mounting base connected to the drain.
Direct substitutes must match the 40 V rating, 75 A current capacity, and SOT404 package. Verify pinout compatibility and ensure equivalent thermal resistance characteristics. Cross-reference with other BUK96xR4-40E variants if minor parameter differences are acceptable.