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Product Detailed Parameters
- Description：MOSFET N-CH 100V 26A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：58mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1924 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：106W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9660-100A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a 100 V drain-source voltage rating and supports a continuous drain current of 26 A at a mounting base temperature of 25 °C with a gate-source drive of 5 V. The device exhibits low on-state resistance, typically 49 mΩ at 10 V gate drive and 15 A drain current. Designed for automotive critical applications, it complies with AEC-Q101 standards and operates with junction temperatures up to 175 °C.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Optimized for logic level gate drive sources
- Engineered for thermally demanding environments with a 175 °C rating
- Minimizes conduction losses through low on-state resistance
Applications
- Switching 12 V, 24 V, and 42 V loads
- Automotive and general purpose power switching
- Control of motors, lamps, and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Confirm current product status as automotive-grade components may undergo lifecycle changes. Ensure design compatibility with AEC-Q101 requirements before finalizing procurement decisions.
Selection Notes
Select this component for high-current switching applications requiring logic-level gate compatibility. Evaluate thermal management strategies given the 106 W total power dissipation capability at 25 °C mounting base temperature. Consider the 175 °C junction temperature limit for operation in constrained thermal environments.
Part Context
This part belongs to the BUK96xx series of N-channel TrenchMOS logic level FETs manufactured by Nexperia USA Inc. The series utilizes advanced trench technology to achieve low on-resistance and robust performance suitable for automotive power distribution systems.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and electrical parameters such as RDS(on) and VGS(th) when evaluating potential replacements.
