ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 100V 23A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：72mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：1704 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：99W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The BUK9675-100A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 23 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 72 mΩ at VGS = 10 V and 75 mΩ at VGS = 5 V. Total power dissipation reaches 98 W at 25 °C. It supports a junction temperature range from -55 °C to +175 °C and includes non-repetitive avalanche energy capability of 100 mJ.
Feature Summary
- Compliant with AEC-Q101 automotive standards for critical applications
- Logic level gate drive enables efficient control at low gate-source voltages
- TrenchMOS technology provides low conduction losses through reduced on-state resistance
Applications
- Automotive power switching circuits
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when an automotive-grade N-channel MOSFET with logic-level gate drive is required. The D2PAK package offers robust thermal performance for high-current applications. Ensure the design accounts for the 175 °C maximum junction temperature rating and verify that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance.
Part Context
This part belongs to Nexperia's BUK9 series of N-channel TrenchMOS logic level FETs. These devices are engineered for automotive reliability, meeting AEC-Q101 qualification standards. The BUK9675-100A specifically targets applications requiring high current handling and low on-resistance in a surface-mount D2PAK (SOT404) package.
Replacement Considerations
Consult official Nexperia documentation for qualified alternative part numbers within the same family or equivalent specifications. Verify pinout compatibility and thermal characteristics before substitution.
