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Product Detailed Parameters
- Description：MOSFET N-CH 55V 20A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：68mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：643 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：62W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9675-55A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it features AEC-Q101 compliance and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 55 V, continuous drain current of 20 A at 25 °C mounting base temperature, and total power dissipation of 62 W. The device exhibits low on-state resistance, typically 75 mΩ at VGS = 5 V and ID = 10 A, enabling efficient switching for 12 V and 24 V load management.
Feature Summary
- Logic level gate drive compatibility allows direct interfacing with standard control sources.
- High thermal performance rated for operation in thermally demanding environments up to 175 °C.
- Low conduction losses achieved through optimized TrenchMOS on-state resistance.
- Qualified for automotive critical applications under AEC-Q101 standards.
Applications
- 12 V and 24 V load switching
- Automotive and general purpose power switching circuits
- Motor, lamp, and solenoid control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with logic-level gate drive compatibility. Ensure the application operates within the 55 V drain-source voltage limit and manages heat dissipation effectively, as the 62 W rating assumes a 25 °C mounting base temperature. Consider the 175 °C junction temperature capability for high-thermal environments.
Part Context
This part belongs to Nexperia's BUK9675 series of N-channel TrenchMOS logic level FETs. It shares the same die and electrical characteristics as the BUK9675-55A but differs in packaging or tape-and-reel configuration indicated by the
Replacement Considerations
Publicly confirmed substitute part numbers are not provided in the source documentation. Verify pinout compatibility (Gate, Drain, Source) and thermal resistance values if considering alternative manufacturers' devices.
FAQ
What is the maximum gate-source voltage allowed?
The absolute maximum peak gate-source voltage is ±15 V pulsed, while the continuous rating is ±10 V.
How does the on-state resistance vary with temperature?
The drain-source on-state resistance increases with junction temperature. At 175 °C, the maximum RDSon at VGS = 5 V and ID = 10 A is specified as 150 mΩ.
