BUK968R3-40E,118

Overview

The BUK968R3-40E,118 is an N-channel TrenchMOS logic level FET manufactured by Nexperia. It features a maximum drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 75 A. The device utilizes a D2PAK surface-mount package with three pins. Key electrical parameters include a maximum drain-source on-state resistance (Rds(on)) of 7.9 mΩ and a total power dissipation (Pd) of 254 W at 25 °C. It operates within a temperature range of -55 °C to 175 °C and is avalanche rated.

Feature Summary

• Logic level gate operation suitable for direct drive from standard logic interfaces
• AEC-Q101 qualified for automotive reliability standards
• Repetitive avalanche rated capability for robust performance
• High thermal stability supporting operation up to 175 °C junction temperature

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control

Procurement Notes

Verify the specific suffix

Selection Notes

Select this component for high-current switching in automotive environments requiring logic-level gate drive. Ensure the design accommodates the 7.9 mΩ Rds(on) for thermal management. Confirm that the D2PAK footprint matches the PCB layout requirements. Validate that the 40 V rating provides sufficient headroom for the target 12 V system transients.

Part Context

This part belongs to the BUK96 series of N-channel TrenchMOS logic level FETs. It shares the same package and general technology as variants like BUK964R4-40B and BUK963R1-40E, differing primarily in its specific on-resistance and current handling capabilities. The series is designed for high-performance automotive applications requiring low conduction losses.

Replacement Considerations

Direct substitutes include BUK964R4-40B,118 and BUK963R1-40E,118. Verify pinout compatibility and ensure the replacement's Rds(on) and Id ratings meet or exceed the original design specifications.