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The BUK98150-55A is an N-channel TrenchMOS logic level FET designed for automotive and general power switching. It features a 55 V drain-source voltage (VDS) and supports a continuous drain current (ID) of 5.5 A at 25 °C. The device exhibits low on-state resistance, with a maximum RDS(on) of 137 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 8 W at a solder point temperature of 25 °C. It operates within a junction temperature range of -55 °C to 150 °C and is qualified to the AEC-Q101 standard.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package and marking specifications. Confirm that the component meets the required AEC-Q101 grade for the intended automotive application. Cross-reference the datasheet revision date with the production batch to account for any potential design or material changes issued through Product Change Notices.
Select this component when designing circuits requiring direct logic-level interface without additional gate drivers. Ensure the thermal design accommodates the 15 K/W junction-to-solder-point thermal resistance to maintain safe operating temperatures under high load conditions. Verify that the peak drain current requirements do not exceed the pulsed limits defined in the safe operating area curves.
This part belongs to the Nexperia BUK98150 series of N-channel enhancement mode MOSFETs. It utilizes TrenchMOS technology to achieve improved performance characteristics compared to standard planar devices. The SOT223 (SC-73) package provides a compact surface-mount solution suitable for automated assembly processes in consumer and industrial electronics manufacturing.
BUK98150-55A/CU