ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 55V 12A SOT223
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：29mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1594 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
Download product information
Overview
The BUK9832-55A is an N-channel TrenchMOS logic level FET designed for automotive and general-purpose power switching. It features a drain-source voltage of 55 V and a continuous drain current of 12 A at 25 °C. The device exhibits low on-state resistance, typically 27 mΩ at VGS = 5 V and ID = 8 A. It supports non-repetitive avalanche energy of 100 mJ and operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Qualified to AEC-Q101 standard for automotive critical applications
Applications
- 12 V and 24 V loads
- Automotive power switching
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering information against the official Nexperia datasheet to ensure correct package type and revision status. Confirm that the SOT223 (SC-73) package meets your thermal and mechanical design requirements. Check for any recent updates to the product data sheet regarding changes in specifications or availability before finalizing procurement plans.
Selection Notes
Select this component when a robust N-channel MOSFET with logic-level gate drive capability is required for 12 V or 24 V systems. Ensure the application demands high reliability in automotive environments, as the device is qualified to AEC-Q101 standards. Consider the thermal resistance characteristics and safe operating area limits when designing the heat dissipation strategy for the target circuit.
Part Context
This part belongs to Nexperia's portfolio of N-channel TrenchMOS logic level FETs. These devices utilize advanced trench technology to achieve low on-state resistance and efficient switching performance. The BUK9832-55A specifically targets applications requiring reliable power switching in automotive and industrial sectors, offering a balance of electrical performance and ruggedness.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference key parameters such as drain-source voltage, on-state resistance, and package dimensions to ensure compatibility with existing designs.
