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Product Detailed Parameters
- Description：MOSFET N-CH 55V 5A SOT223
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：40mOhm @ 5A, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
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Overview
The BUK9840-55,115 is an N-channel TrenchMOS logic level FET in a SOT223 plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 10.7 A at 25 °C. The device exhibits a maximum on-state resistance of 40 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 8.3 W at 25 °C solder point temperature. Non-repetitive avalanche energy capability is rated at 60 mJ under specified conditions.
Feature Summary
- AEC Q101 compliant for automotive critical applications
- Integrated protection diodes provide electrostatic robustness
- Low conduction losses due to low on-state resistance
Applications
- Automotive power switching
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and compliance status. Ensure the component matches the required SOT223 package variant. Confirm that the intended application environment aligns with the qualified automotive standards defined in the product data sheet before finalizing procurement.
Selection Notes
Select this component for designs requiring logic-level gate drive compatibility with low on-state resistance. Verify that the operating junction temperature remains within the -55 °C to 150 °C range. Ensure thermal management strategies account for the specified thermal resistance values to maintain safe operating area limits during high-current pulses.
Part Context
This device belongs to the NXP Semiconductors (now Nexperia) BUK9 series of N-channel enhancement mode Field-Effect Transistors. Utilizing TrenchMOS technology, it is designed for surface-mount assembly in the SC-73 (SOT223) package. The product line targets high-performance automotive and general-purpose power switching applications requiring robust reliability.
Replacement Considerations
Consult official Nexperia replacement guides for verified substitutes. Cross-reference pinout configurations and electrical parameters carefully when evaluating alternative components from other manufacturers.
