BUK9880-55/CUF

Description：MOSFET N-CH 55V 7.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:6844583f0722 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 7.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：80mOhm @ 5A, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：650 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：8.3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Download product information

BUK9880-55/CUF

Overview

The BUK9880-55/CUF is an N-channel TrenchMOS logic level FET in a SOT223 package. It features a drain-source voltage of 55 V and a continuous drain current of 7.5 A at 25 °C. The device has a maximum power dissipation of 8.3 W. At VGS = 5 V and ID = 5 A, the on-state resistance is typically 65 mΩ with a maximum of 80 mΩ. It includes integrated protection diodes for electrostatic robustness and is qualified to AEC-Q101 standards.

Feature Summary

AEC-Q101 compliant for automotive critical applications
Electrostatically robust due to integrated protection diodes
Low conduction losses due to low on-state resistance

Applications

Automotive power switching
General purpose power switching

Procurement Notes

Verify the specific ordering suffix /CUF against the manufacturer's official documentation to confirm package variant and marking code accuracy. Ensure the component status is active before design finalization. Confirm RoHS compliance and REACH status requirements match project specifications. Validate that the SOT223 thermal characteristics align with the target printed-circuit board layout and heat dissipation strategy.

Selection Notes

Select this component when a logic-level gate drive is required for 55 V N-channel switching applications. The low on-state resistance at VGS = 5 V makes it suitable for direct microcontroller or standard logic interface without additional gate drivers. Consider the 8.3 W power dissipation limit and thermal resistance values for adequate heatsinking or PCB copper area allocation in high-current scenarios.

Part Context

This part belongs to the BUK9880-55 series of N-channel enhancement mode Field-Effect Transistors manufactured by Nexperia (formerly NXP Semiconductors). It utilizes TrenchMOS technology to achieve low on-resistance within a plastic surface-mounted package designed for increased heat sink capability. The product is intended for use in environments requiring automotive-grade reliability and ruggedness.