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The Nexperia BUK9D23-40EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates with a drain-source voltage of 40 V and supports a continuous drain current of 19 A at a solder point temperature of 25 °C. The device features a maximum drain-source on-state resistance of 23 mΩ at 25 °C and a total power dissipation capacity of 15 W under the same conditions. Packaged in a DFN2020MD-6 (SOT1220) surface-mount format measuring 2 x 2 x 0.65 mm, it includes side wettable flanks for optical inspection and is qualified to the AEC-Q101 standard.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel dimensions or tape specifications. Confirm that the component meets all required environmental standards for your specific deployment environment before finalizing procurement decisions.
Select this component when a compact footprint is required alongside high thermal performance. The low on-state resistance minimizes conduction losses, while the extended junction temperature rating up to 175 °C ensures reliability in thermally demanding environments compared to standard commercial grade alternatives.
This device belongs to Nexperia's portfolio of medium power N-channel Trench MOSFETs designed for surface-mounted applications. The DFN2020MD-6 package provides enhanced thermal dissipation capabilities relative to its physical size, making it suitable for space-constrained designs requiring robust switching performance.
BUK9D23-40E
The maximum operating junction temperature is 175 °C.
Yes, the DFN2020MD-6 package includes side wettable flanks specifically designed to facilitate optical solder inspection.