ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V I2PAK
- Series：-
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Download product information
Overview
BUK9E1R9-40E,127 is an N-channel TrenchMOS standard level MOSFET in a SOT226 package. It utilizes advanced trench technology to achieve low on-resistance and high switching efficiency. The device is designed for robust performance in demanding environments, featuring a maximum drain-source voltage of 40 V and a continuous drain current capability suitable for power switching applications.
Feature Summary
- Standard logic level gate drive compatibility
- High thermal stability with 175 °C rating
- Repetitive avalanche rated for rugged operation
Applications
- 12 V automotive systems
- Motor control circuits
- Lamp and solenoid control
- Transmission control units
- Ultra high performance power switching
Procurement Notes
Verify the specific suffix '127' against official Nexperia documentation to confirm reel packaging specifications. Ensure the component meets AEC-Q101 standards if required for your automotive application design. Cross-reference datasheets for exact thermal resistance values.
Selection Notes
Select this component for applications requiring reliable N-channel switching at 40 V. Consider its standard level gate threshold for direct microcontroller interfacing. Evaluate thermal management requirements given the 175 °C operating temperature capability and SOT226 package constraints.
Part Context
This part belongs to the BUK9E series of N-channel MOSFETs from Nexperia. These devices are engineered using TrenchMOS technology to provide superior performance compared to planar technologies. The series targets high-volume automotive and industrial markets requiring cost-effective yet durable power solutions.
Replacement Considerations
Check for compatible parts within the BUK9E family or other Nexperia TrenchMOS devices with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before substituting.
