BUK9E2R8-60E,127

$1.34

Description：MOSFET N-CH 60V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:6416e76bdd1a Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：17.45 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK9E2R8-60E,127

Overview

The BUK9E2R8-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology in an I2PAK (SOT226) package. It features a drain-source voltage of 60 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 2.8 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 349 W under specified conditions, with a junction temperature range spanning -55 °C to +175 °C.

Feature Summary

AEC-Q101 compliant for automotive reliability
Repetitive avalanche rated capability
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating greater than 0.5V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure the component matches the required I2PAK (SOT226) form factor for your design. Cross-reference the datasheet revision date to confirm technical specifications remain current. Confirm RoHS and REACH compliance requirements align with your manufacturing standards before finalizing procurement.

Selection Notes

Select this component for high-current applications requiring low on-state resistance and robust thermal performance. The logic level gate drive allows compatibility with standard control voltages while maintaining efficiency. Consider the 175 °C junction temperature rating for operation in constrained thermal environments. Verify that the package size fits within the available PCB real estate constraints.

Part Context

This part belongs to Nexperia's TrenchMOS family, designed for high-performance switching. It utilizes advanced trench gate technology to minimize conduction losses. The product line targets automotive and industrial sectors where reliability under harsh conditions is critical. The I2PAK package provides excellent thermal dissipation capabilities compared to smaller surface-mount alternatives.