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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A I2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：69.5 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：9150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：234W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK9E3R2-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an I2PAK (SOT226) plastic single-ended package. Designed for high-performance automotive applications, it meets the AEC-Q101 standard. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device features a typical on-state resistance of 2.7 mΩ at VGS = 5 V and ID = 25 A. It supports junction temperatures up to 175 °C and offers repetitive avalanche ruggedness with a non-repetitive avalanche energy rating of 419 mJ.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Repetitive avalanche rated for robust operation
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with low threshold voltage at elevated temperatures
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring high current handling in automotive environments. The I2PAK package provides efficient thermal dissipation via the mounting base. Ensure gate drive voltages align with the logic level characteristics for optimal RDSon performance. Consider the repetitive avalanche rating if inductive load switching is present. Verify that the application's thermal management can support the specified junction temperature limits under maximum load conditions.
Part Context
This device belongs to the Nexperia (formerly NXP Standard Product) portfolio of discrete semiconductors. It utilizes TrenchMOS technology to achieve low on-resistance within a compact SOT226 package. The product line is targeted at automotive, industrial, computing, consumer, and wearable markets, emphasizing reliability and performance in demanding operating conditions.
Replacement Considerations
Direct substitutes must match the 40 V rating, 100 A current capacity, and SOT226 package. Verify equivalent RDSon and thermal resistance values. Check for identical AEC-Q101 qualification status if automotive compliance is required. Ensure pinout compatibility (Gate, Drain, Source) before integration.
