BUK9K12-80LX

Overview

The Nexperia BUK9K12-80L is a dual N-channel logic level MOSFET housed in an LFPAK56D (SOT1205) package. It utilizes Trench12 technology and meets AEC-Q101 standards for automotive use. Key electrical parameters include a drain-source voltage of 80 V, continuous drain current of 51 A at 25 °C mounting base temperature, and total power dissipation of 68 W. The typical on-state resistance is 8.8 mΩ at VGS = 10 V and ID = 15 A. Gate charge is typically 22 nC at VGS = 5 V.

Feature Summary

• Dual MOSFET configuration with two silicon dies integrated into a single LFPAK56D package to reduce footprint.
• Side-wettable flanks designed to facilitate robust solder joints and enable automatic optical inspection.
• Soft body-diode recovery characteristics for efficient switching performance.
• Qualified for high-performance automotive applications with operation up to 175 °C junction temperature.

Applications

• 12 V, 24 V, and 48 V automotive systems
• Motor, lighting, and solenoid control
• Transmission control
• LED lighting
• Circuit protection

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm availability and exact specifications. Confirm that the component matches the required AEC-Q101 qualification status for your target application environment. Ensure compatibility with the LFPAK56D (SOT1205) surface mount package dimensions during PCB layout design.

Selection Notes

Select this component when space constraints require a dual MOSFET solution within a standard Dual Power-SO8 footprint. The low on-state resistance supports high-current applications up to 51 A. Consider the thermal resistance characteristics and the requirement for side-wettable flanks if automated optical inspection is part of the manufacturing process.

Part Context

This device belongs to Nexperia's BUK9K series of logic level MOSFETs. It employs Trench12 technology to achieve low on-resistance and fast switching speeds. The product is specifically engineered for automotive environments, offering ruggedness through repetitive avalanche rating capabilities and high-temperature stability.

Replacement Considerations

BUK9K12-80EX

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 88.9 mJ under conditions of ID = 27.6 A, Vsup ≤ 80 V, RGS = 50 Ω, VGS = 5 V, and initial junction temperature of 25 °C.

How does the gate-source threshold voltage vary with temperature?

The gate-source threshold voltage decreases as the junction temperature increases. At 25 °C, it ranges from 1.4 V to 2.05 V, while at 175 °C, the minimum value drops to 0.5 V.

What are the pin assignments for the LFPAK56D package?

Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Source 2, Pin 4 is Gate 2, Pins 5 and 6 are Drain 2, and Pins 7 and 8 are Drain 1.