BUK9K13-60RAX

BUK9K13-60RAX

$1.44
  • Description:MOSFET 2N-CH 60V 40A LFPAK56D
  • Series:-

SKU:1abcdd9cd64e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 40A LFPAK56D
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:40A (Ta)
  • Rds On (Max) @ Id, Vgs:11.2mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:22.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:2953pF @ 25V
  • Power - Max:64W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q101

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BUK9K13-60RAX

Overview

The Nexperia BUK9K13-60RA is a dual N-channel logic level MOSFET in an LFPAK56D (SOT1205) package. It utilizes Application Specific (ASFET) repetitive avalanche silicon technology and is qualified to AEC-Q101 for automotive use. Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 40 A at 25 °C, and total power dissipation of 64 W. The typical on-state resistance is 12.5 mΩ at VGS = 5 V and ID = 10 A. The device supports junction temperatures up to 175 °C.

Feature Summary

  • Fully automotive qualified to AEC-Q101 standard with operation up to 175 °C
  • Repetitive avalanche rated to withstand 1 billion avalanche events with a 30 °C Tj rise
  • LFPAK copper clip package technology providing high robustness and reliability
  • Gull wing leads designed for high manufacturability and automated optical inspection

Applications

  • 12 V, 24 V and 48 V automotive systems
  • Repetitive avalanche topologies
  • Engine control units
  • Transmission control systems
  • Actuator and auxiliary loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets the required AEC-Q101 qualification standards for your specific automotive application environment. Cross-reference the datasheet revision date to ensure compatibility with your design specifications.

Selection Notes

Select this component for designs requiring high ruggedness in repetitive avalanche scenarios. The low on-state resistance and high current capability make it suitable for efficient power switching in automotive environments. Ensure thermal management aligns with the specified junction temperature limits and power dissipation ratings under operating conditions.

Part Context

This part belongs to Nexperia's BUK9K series of dual N-channel MOSFETs. It is specifically engineered using repetitive avalanche technology within the LFPAK56D package. The series targets high-performance automotive applications where reliability under stress conditions is critical. It complements other variants in the lineup offering different voltage or current ratings.

Replacement Considerations

BUK9K13-60EX

FAQ

What is the maximum number of repetitive avalanche events the BUK9K13-60RA can withstand?

The device is tested and rated to withstand 1 billion avalanche events with a junction temperature rise limited to 30 °C.

Is the BUK9K13-60RA suitable for automotive applications?

Yes, the product has been fully qualified to the AEC-Q101 standard for use in automotive applications.

What is the gate-source threshold voltage range at 25 °C?

At 25 °C, the gate-source threshold voltage ranges from a minimum of 1.4 V to a maximum of 2.1 V when the drain current is 1 mA.

BUK9K13-60RAXBUK9K13-60RAX
$1.44
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