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The Nexperia BUK9K13-60RA is a dual N-channel logic level MOSFET in an LFPAK56D (SOT1205) package. It utilizes Application Specific (ASFET) repetitive avalanche silicon technology and is qualified to AEC-Q101 for automotive use. Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 40 A at 25 °C, and total power dissipation of 64 W. The typical on-state resistance is 12.5 mΩ at VGS = 5 V and ID = 10 A. The device supports junction temperatures up to 175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets the required AEC-Q101 qualification standards for your specific automotive application environment. Cross-reference the datasheet revision date to ensure compatibility with your design specifications.
Select this component for designs requiring high ruggedness in repetitive avalanche scenarios. The low on-state resistance and high current capability make it suitable for efficient power switching in automotive environments. Ensure thermal management aligns with the specified junction temperature limits and power dissipation ratings under operating conditions.
This part belongs to Nexperia's BUK9K series of dual N-channel MOSFETs. It is specifically engineered using repetitive avalanche technology within the LFPAK56D package. The series targets high-performance automotive applications where reliability under stress conditions is critical. It complements other variants in the lineup offering different voltage or current ratings.
BUK9K13-60EX
The device is tested and rated to withstand 1 billion avalanche events with a junction temperature rise limited to 30 °C.
Yes, the product has been fully qualified to the AEC-Q101 standard for use in automotive applications.
At 25 °C, the gate-source threshold voltage ranges from a minimum of 1.4 V to a maximum of 2.1 V when the drain current is 1 mA.