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The Nexperia BUK9K25-40EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 18.2 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 29 mΩ at VGS = 5 V and ID = 5 A, with a total power dissipation capability of 32 W. Designed for automotive environments, it supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets the required AEC-Q101 qualification status for your target application environment. Cross-reference the datasheet revision date to ensure compatibility with your design specifications and regulatory requirements.
Select this component for designs requiring dual N-channel isolation within a compact footprint. The low on-state resistance minimizes conduction losses in power switching circuits. Ensure the thermal management solution accommodates the specified junction-to-mounting base thermal resistance. Verify that the gate drive voltage aligns with the logic level characteristics for optimal performance.
This part belongs to the Nexperia BUK9K series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to achieve low on-resistance in a small plastic surface-mounted package. The LFPAK56D variant provides enhanced thermal performance compared to standard packages, supporting the 175 °C operating temperature rating required for demanding automotive electronics.
BUK9K25-40E