BUK9K25-40EX

BUK9K25-40EX

$0.74
  • Description:MOSFET 2N-CH 40V 18.2A LFPAK56D
  • Series:TrenchMOS™

SKU:1cf0b20bc14a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 18.2A LFPAK56D
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:18.2A
  • Rds On (Max) @ Id, Vgs:24mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:6.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:701pF @ 25V
  • Power - Max:32W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q100

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BUK9K25-40EX

Overview

The Nexperia BUK9K25-40EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 18.2 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 29 mΩ at VGS = 5 V and ID = 5 A, with a total power dissipation capability of 32 W. Designed for automotive environments, it supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Dual MOSFET configuration in a single LFPAK56D surface-mounted package
  • Qualified to AEC-Q101 automotive standards for high-performance applications
  • Repetitive avalanche rated for robust operation under transient conditions
  • True logic level gate enabling efficient drive with low threshold voltage

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets the required AEC-Q101 qualification status for your target application environment. Cross-reference the datasheet revision date to ensure compatibility with your design specifications and regulatory requirements.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact footprint. The low on-state resistance minimizes conduction losses in power switching circuits. Ensure the thermal management solution accommodates the specified junction-to-mounting base thermal resistance. Verify that the gate drive voltage aligns with the logic level characteristics for optimal performance.

Part Context

This part belongs to the Nexperia BUK9K series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to achieve low on-resistance in a small plastic surface-mounted package. The LFPAK56D variant provides enhanced thermal performance compared to standard packages, supporting the 175 °C operating temperature rating required for demanding automotive electronics.

Replacement Considerations

BUK9K25-40E

BUK9K25-40EXBUK9K25-40EX
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