BUK9K30-80EX

$0.67

Description：MOSFET 2N-CH 80V 17A LFPAK56D
Series：-

SKU:374e4bcf8088 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 80V 17A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：80V
Current - Continuous Drain (Id) @ 25°C：17A (Ta)
Rds On (Max) @ Id, Vgs：26mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：17.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：2297pF @ 25V
Power - Max：53W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q101

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BUK9K30-80EX

Overview

The Nexperia BUK9K30-80EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features an 80 V drain-source voltage rating and a maximum continuous drain current of 17 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 21 mΩ at VGS = 5 V and ID = 5 A, with a total gate charge of 17.5 nC. Designed for automotive environments, it supports junction temperatures up to 175 °C and includes repetitive avalanche capability.

Feature Summary

Dual MOSFET configuration in a single LFPAK56D package
Qualified to AEC-Q101 standard for high-performance automotive applications
True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
Repetitive avalanche rated for robust performance in demanding environments

Applications

12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets the required AEC-Q101 qualification standards for your specific automotive application environment. Cross-reference the pinning information and thermal characteristics with your PCB layout design to ensure proper heat dissipation and electrical connectivity.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact surface-mount footprint. The low on-state resistance and logic-level gate drive make it suitable for efficient power switching in automotive loads. Ensure the thermal management design accommodates the specified junction temperature limits and power dissipation requirements under expected operating conditions.

Part Context

This device belongs to Nexperia's TrenchMOS family of logic level MOSFETs, designed specifically for automotive reliability. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages, supporting the 175 °C junction temperature rating. It serves as a dual-channel solution for space-constrained automotive circuit designs requiring high efficiency.