BUK9K31-100LX

Overview

The Nexperia BUK9K31-100LX is a dual N-channel logic level MOSFET housed in an LFPAK56D (SOT1205) package. It integrates two silicon dies for space efficiency and utilizes Trench12 technology. The device supports a drain-source voltage of 100 V and a continuous drain current of 24 A at 25 °C mounting base temperature. The typical on-state resistance is 31 mΩ at VGS = 10 V. It features soft body-diode recovery, repetitive avalanche ruggedness, and side-wettable flanks for robust soldering. Qualified to AEC-Q101 standards, it operates with junction temperatures up to 175 °C.

Feature Summary

• Dual MOSFET configuration integrating two silicon dies within a single LFPAK56D package for significant space saving
• Automotive qualified to AEC-Q101 standard with operation suitable for thermally demanding environments up to 175 °C
• Trench12 MOSFET technology providing efficient switching characteristics combined with soft body-diode recovery
• Side-wettable flanks designed to ensure robust solder joints and facilitate automatic optical inspection

Applications

• 12 V, 24 V, and 48 V automotive systems
• Motor, lighting, and solenoid control circuits
• Transmission control modules
• LED lighting applications
• Circuit protection implementations

Procurement Notes

Verify the specific ordering suffix 'X' against official Nexperia documentation to confirm reel packaging specifications or tape-and-reel dimensions. Ensure the component matches the SOT1205 package variant. Confirm that the marking code corresponds to the intended revision. Cross-reference the datasheet version date to validate current electrical parameters before finalizing procurement orders.

Selection Notes

Select this component when designing automotive circuits requiring dual N-channel isolation within a compact footprint. The logic-level gate drive compatibility simplifies interface design with standard microcontrollers. Evaluate thermal management requirements based on the specified power dissipation limits and junction-to-mounting-base thermal resistance. Consider the repetitive avalanche rating for inductive load switching scenarios common in motor and solenoid applications.

Part Context

This device belongs to Nexperia's automotive-grade discrete semiconductor portfolio, specifically engineered for high-performance applications. It leverages advanced Trench12 technology to deliver low on-resistance and fast switching speeds. The LFPAK56D package provides enhanced thermal performance and mechanical reliability compared to traditional surface-mount packages, supporting the increasing density demands of modern vehicle electronics.

Replacement Considerations

Direct substitutes include the BUK9K31-100L and BUK9K32-100E variants within the same family. Verify pinout compatibility and electrical parameter tolerances such as RDS(on) and breakdown voltage. Ensure the replacement maintains AEC-Q101 qualification status if required for the specific automotive application environment.

FAQ

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is 175 °C.

Does this MOSFET support repetitive avalanche operations?

Yes, the device is rated for repetitive avalanche operations.

How many channels are integrated into the LFPAK56D package?

The package contains two independent N-channel MOSFETs.