BUK9K32-100EX

$0.73

Description：MOSFET 2N-CH 100V 26A LFPAK56D
Series：TrenchMOS™

SKU:e9be788ea34f Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 26A LFPAK56D
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：26A
Rds On (Max) @ Id, Vgs：31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：27.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：3168pF @ 25V
Power - Max：64W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q100

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BUK9K32-100EX

Overview

The BUK9K32-100EX is a dual N-channel logic level MOSFET in an LFPAK56D (SOT1205) package using TrenchMOS technology. It features a drain-source voltage of 100 V and a continuous drain current of 26 A at 25 °C mounting base temperature. The typical on-state resistance is 26.6 mΩ at VGS = 5 V, with a maximum of 33 mΩ. Total power dissipation reaches 64 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Dual MOSFET configuration within a single LFPAK56D package for space efficiency
Automotive qualified to AEC-Q101 standard for high performance applications
True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
Repetitive avalanche rated for ruggedness in demanding environments

Applications

12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the exact part number BUK9K32-100E as defined in the product data sheet. Cross-reference marking codes and pin configurations during receipt inspection to guarantee authenticity and correct functionality.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a compact surface-mount footprint. The low on-state resistance and logic-level gate drive compatibility make it suitable for efficient power switching. Consider the thermal resistance characteristics and the 175 °C operating limit when designing heat dissipation strategies for the application environment.

Part Context

This device belongs to Nexperia's automotive-grade MOSFET portfolio, utilizing TrenchMOS technology. It is designed specifically for high-performance automotive applications where reliability under thermal stress is critical. The LFPAK56D package provides enhanced thermal performance compared to standard plastic packages, supporting robust soldering and automatic optical inspection.