BUK9K35-60E,115

Overview

The BUK9K35-60E,115 is a dual N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a 60 V drain-source voltage and a continuous drain current of 22 A at 25 °C mounting base temperature. The device offers a maximum on-state resistance of 35 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 38 W under standard thermal conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration within a single surface-mounted package
• Qualified to AEC-Q101 automotive standards for high-performance applications
• Capable of operating in thermally demanding environments with a 175 °C junction temperature rating
• Features true logic level gate characteristics with low threshold voltage at elevated temperatures

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring dual isolated channels in a compact footprint. The LFPAK56D package provides efficient thermal transfer to the mounting base. Ensure gate drive voltages align with the logic level specifications for optimal RDSon performance. Consider the 175 °C thermal rating for high-temperature operational environments.

Part Context

This part belongs to Nexperia's TrenchMOS family of logic level MOSFETs. It shares the LFPAK56D package form factor with other devices in the series but differs in electrical ratings such as on-resistance and voltage. The marking code for this specific type is 93560E.

Replacement Considerations

Direct substitutes include BUK9K12-60E, BUK9K17-60E, and BUK9K52-60E from the same manufacturer. These alternatives share the same package and general functionality but vary in on-state resistance values.

FAQ

What is the gate-source threshold voltage at 175 °C?

The gate-source threshold voltage drops to greater than 0.5 V at a junction temperature of 175 °C.

Is the device rated for avalanche energy?

Yes, the BUK9K35-60E is repetitively avalanche rated, with a non-repetitive drain-source avalanche energy of 19.5 mJ under specified conditions.

What is the thermal resistance from junction to mounting base?

The thermal resistance from junction to mounting base is typically 3.96 K/W.