BUK9K52-60E,115

Overview

The BUK9K52-60E,115 is a dual N-channel logic level MOSFET manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology and is housed in an LFPAK56D (SOT1205) surface-mount package. The device features a drain-source voltage rating of 60 V and a continuous drain current of 16 A at 25 °C mounting base temperature. Total power dissipation is rated at 32 W under the same conditions. The maximum on-state resistance is 55 mΩ at VGS = 5 V and ID = 5 A. It supports junction temperatures up to 175 °C and includes repetitive avalanche capability.

Feature Summary

• Dual MOSFET configuration within a single LFPAK56D package
• Automotive qualified to AEC-Q101 standard for high performance applications
• Repetitive avalanche rated for robust operation in demanding environments
• True logic level gate with threshold voltage greater than 0.5 V at 175 °C

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a dual N-channel solution is required for automotive or industrial power switching. The LFPAK56D package offers thermal efficiency suitable for space-constrained designs. Ensure gate drive voltages align with the logic level requirements for optimal RDSon performance. Consider the repetitive avalanche rating if the application involves inductive load switching.

Part Context

This part belongs to Nexperia's BUK9 series of TrenchMOS devices, designed for automotive and general-purpose power management. The LFPAK56D package provides enhanced thermal dissipation compared to traditional SO-8 packages. The dual configuration allows for bridge topologies or parallel channel usage within a compact footprint, supporting modern miniaturization trends in electronic control units.

Replacement Considerations

Direct replacements must match the 60 V rating, dual N-channel configuration, and LFPAK56D package. Verify that substitute parts meet AEC-Q101 qualification if automotive use is intended. Check that the replacement's RDSon and thermal resistance characteristics are compatible with the existing design constraints.

FAQ

What is the maximum junction temperature for the BUK9K52-60E?

The maximum operating junction temperature is 175 °C.

Is the BUK9K52-60E suitable for automotive applications?

Yes, it is fully qualified to the AEC-Q101 standard for use in high-performance automotive applications.

What technology is used in this MOSFET?

The device uses TrenchMOS technology to achieve low on-state resistance and fast switching speeds.