BUK9K52-60RAX

Overview

The Nexperia BUK9K52-60RA is a dual N-channel logic level MOSFET utilizing Application Specific (ASFET) repetitive avalanche silicon technology. It operates within an LFPAK56D package and meets AEC-Q101 automotive qualification standards for temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 16 A at 25 °C, and a maximum total power dissipation of 32 W. The device features a typical on-state resistance of 47.3 mΩ at 25 °C and supports a peak pulsed drain current of 64 A.

Feature Summary

• Fully qualified to AEC-Q101 automotive standards with operation up to 175 °C junction temperature.
• Rated for repetitive avalanche applications, tested to one billion avalanche events.
• LFPAK copper clip package technology provides high robustness and reliability.
• Gull wing leads facilitate high manufacturability and automated optical inspection.

Applications

• 12 V, 24 V and 48 V automotive systems
• Repetitive avalanche topologies
• Engine control
• Transmission control
• Actuator and auxiliary loads

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains in production before finalizing design-in decisions. Cross-reference the marking code '95260RA' with physical samples during incoming inspection to prevent counterfeit parts. Ensure all procurement channels are authorized distributors to maintain traceability and warranty coverage.

Selection Notes

Select this component when designing circuits requiring high ruggedness against inductive load switching or fault conditions. The repetitive avalanche rating makes it suitable for topologies where energy dissipation occurs during turn-off. Consider the thermal resistance characteristics and mounting base temperature limits for heat management. Verify that the gate drive voltage aligns with the logic level requirements for optimal on-state performance.

Part Context

This device belongs to Nexperia's BUK9 series of dual N-channel MOSFETs designed for automotive environments. It utilizes TrenchMOS technology adapted for repetitive avalanche capabilities. The LFPAK56D package offers a compact footprint with enhanced thermal performance compared to standard plastic packages. It serves as a specialized solution for high-reliability power switching applications in vehicles.

Replacement Considerations

BUK9K52-60E

FAQ

What is the maximum number of repetitive avalanche events the device can withstand?

The device has been tested to withstand one billion avalanche events under specified conditions.

How does the on-state resistance change after repetitive avalanche cycling?

The on-state resistance increases as a function of the number of avalanche cycles; refer to Figure 6 in the datasheet for the percentage increase.

Is the device suitable for use in life support or safety-critical systems?

No, unless explicitly agreed in writing. The product is not designed, authorized, or warranted for life support, life-critical, or safety-critical systems.