BUK9K6R2-40E,115

BUK9K6R2-40E,115

$1.28
  • Description:MOSFET 2N-CH 40V 40A LFPAK56D
  • Series:TrenchMOS™

SKU:f9e321437d10 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 40A LFPAK56D
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:40A
  • Rds On (Max) @ Id, Vgs:6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:35.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:3281pF @ 25V
  • Power - Max:68W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q101

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BUK9K6R2-40E,115

Overview

The BUK9K6R2-40E is a dual N-channel TrenchMOS logic level FET housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The typical on-state resistance is 5.27 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 68 W under specified conditions. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Dual MOSFET configuration integrated within a single LFPAK56D surface-mount package.
  • Qualified to AEC-Q101 automotive standards for high-performance applications.
  • Capable of operation in thermally demanding environments with a 175 °C junction temperature rating.
  • Features true logic level gate characteristics ensuring reliable switching performance.

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Start-stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a compact dual N-channel solution is required for automotive or industrial power switching. The LFPAK56D package offers improved thermal performance compared to standard SO-8 packages. Ensure the application voltage does not exceed the 40 V drain-source limit and that gate drive signals align with the logic level threshold specifications for optimal efficiency.

Part Context

This device belongs to Nexperia's BUK9 series of automotive-qualified MOSFETs utilizing TrenchMOS technology. The series is designed to meet rigorous automotive reliability standards while providing low on-resistance in small form factors. The BUK9K6R2-40E specifically targets applications requiring dual channel isolation within a single footprint.

Replacement Considerations

Direct replacements must match the LFPAK56D (SOT1205) package and 40 V/40 A ratings. Verify pinout compatibility as other dual MOSFETs may differ. Check if alternative parts meet the same AEC-Q101 qualification requirements for automotive use.

FAQ

Is the BUK9K6R2-40E suitable for automotive applications?

Yes, the product has been designed and qualified to the AEC-Q101 standard specifically for use in high-performance automotive applications.

What is the maximum junction temperature for this device?

The maximum operating junction temperature is 175 °C, making it suitable for thermally demanding environments.

Does the BUK9K6R2-40E support avalanche operations?

Yes, the device is repetitively avalanche rated, allowing it to handle avalanche energy events safely within its specified limits.

BUK9K6R2-40E,115BUK9K6R2-40E,115
$1.28
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