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The BUK9K6R2-40E is a dual N-channel TrenchMOS logic level FET housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The typical on-state resistance is 5.27 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 68 W under specified conditions. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
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Select this component when a compact dual N-channel solution is required for automotive or industrial power switching. The LFPAK56D package offers improved thermal performance compared to standard SO-8 packages. Ensure the application voltage does not exceed the 40 V drain-source limit and that gate drive signals align with the logic level threshold specifications for optimal efficiency.
This device belongs to Nexperia's BUK9 series of automotive-qualified MOSFETs utilizing TrenchMOS technology. The series is designed to meet rigorous automotive reliability standards while providing low on-resistance in small form factors. The BUK9K6R2-40E specifically targets applications requiring dual channel isolation within a single footprint.
Direct replacements must match the LFPAK56D (SOT1205) package and 40 V/40 A ratings. Verify pinout compatibility as other dual MOSFETs may differ. Check if alternative parts meet the same AEC-Q101 qualification requirements for automotive use.
Yes, the product has been designed and qualified to the AEC-Q101 standard specifically for use in high-performance automotive applications.
The maximum operating junction temperature is 175 °C, making it suitable for thermally demanding environments.
Yes, the device is repetitively avalanche rated, allowing it to handle avalanche energy events safely within its specified limits.