BUK9K89-100E,115

Overview

The BUK9K89-100E,115 is a dual N-channel TrenchMOS logic level FET in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a continuous drain current of 12.5 A at 25 °C. The typical on-state resistance is 75.8 mΩ at VGS = 5 V and 25 °C. Total power dissipation reaches 38 W at 25 °C mounting base temperature. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration compliant with AEC-Q101 automotive standards
• Repetitive avalanche rated for robust performance under transient conditions
• Operates in thermally demanding environments with a 175 °C junction temperature rating
• True logic level gate drive capability with threshold voltage greater than 0.5 V at 175 °C

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the complete part number including the trailing suffix against official Nexperia documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the LFPAK56D footprint matches your PCB design guidelines. Check for any recent product change notices or longevity program updates regarding end-of-life status before finalizing procurement plans.

Selection Notes

Select this component for designs requiring dual isolated channels within a compact surface-mount footprint. The low on-state resistance minimizes conduction losses in power switching applications. Ensure gate drive circuits can supply sufficient voltage to fully enhance the logic-level gates. Verify thermal management strategies align with the specified junction-to-mounting base thermal resistance for reliable operation.

Part Context

This device belongs to Nexperia's TrenchMOS family, utilizing advanced trench gate technology to achieve low specific on-resistance. The LFPAK56D package provides enhanced thermal performance compared to standard plastic packages. It is engineered specifically for high-performance automotive electronics where reliability and space constraints are critical factors.

Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics when replacing similar dual MOSFETs in existing designs.

FAQ

What is the maximum junction temperature for this device?

The maximum operating junction temperature is 175 °C.

Is this component qualified for automotive applications?

Yes, it is designed and qualified to the AEC-Q101 standard.

Does the device support avalanche operation?

Yes, the FETs are repetitively avalanche rated.