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Product Detailed Parameters
- Description：MOSFET N-CH 30V 37A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：725 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：44W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The BUK9M17-30EX is an N-channel logic level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) plastic surface-mounted package. It features a drain-source voltage of 30 V and a continuous drain current of 37 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 17 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation reaches 44 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with the AEC Q101 standard for automotive applications
- Capable of operation in thermally demanding environments with a 175 °C rating
- Features true logic level gate drive with threshold voltage greater than 0.5 V at 175 °C
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration. Ensure the requested part number matches the exact marking code and package variant required for the design. Cross-reference the latest datasheet revision to validate electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring low conduction losses and robust thermal performance in compact spaces. The LFPAK33 package provides efficient heat dissipation through the mounting base. Verify that the application voltage and current requirements remain within the absolute maximum ratings defined in the product data sheet.
Part Context
This device belongs to the Nexperia BUK9M series of N-channel MOSFETs designed for high-performance switching. The 'E' suffix typically denotes the standard production version, while the 'X' indicates the reel packaging format. These components are engineered for automotive reliability using advanced TrenchMOS fabrication techniques.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Direct replacements must match the LFPAK33 package, 30 V rating, and comparable RDS(on) characteristics. Verify pinout compatibility and thermal resistance values before integrating substitute parts into existing layouts.
