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Product Detailed Parameters
- Description：MOSFET N-CH 60V 38A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：13.8 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1814 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：62W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The BUK9M19-60EX is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 60 V and a continuous drain current of 38 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 19 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation reaches 62 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified for automotive applications according to the AEC-Q101 standard.
- Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C.
- Designed for thermally demanding environments with a 175 °C operating rating.
- Includes repetitive avalanche rating for robust performance.
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Ensure the requested part number matches the required thermal and electrical specifications for the target application. Confirm compliance with relevant environmental directives such as RoHS and REACH requirements prior to procurement.
Selection Notes
Select this component for designs requiring low on-state resistance and high current handling in compact surface-mount layouts. The logic level gate drive capability simplifies interface with standard microcontrollers or drivers. Consider the thermal resistance characteristics when designing heat dissipation paths for high-power scenarios.
Part Context
This device belongs to the Nexperia BUK9M series of automotive-grade power MOSFETs. It employs TrenchMOS technology to achieve enhanced performance within the LFPAK33 package. The series is engineered to meet rigorous automotive reliability standards while providing efficient power switching solutions for various vehicle electronic systems.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout compatibility and electrical parameters before integrating any substitute components into existing designs.
