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Product Detailed Parameters
- Description：MOSFET N-CH 80V 37A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2808 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The Nexperia BUK9M23-80EX is an N-channel logic level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 80 V and a continuous drain current of 37 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 23 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation reaches 79 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 automotive standards for high-performance applications
- Features true logic level gate drive with threshold voltage greater than 0.5 V at 175 °C
- Repetitive avalanche rated for enhanced ruggedness
- Suitable for thermally demanding environments due to 175 °C operating capability
Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration. Confirm that the requested variant matches the LFPAK33 package type and lead-free specifications. Ensure design compliance with AEC-Q101 requirements if intended for automotive use. Cross-reference marking codes and pinning diagrams during integration.
Selection Notes
Select this component for designs requiring low on-state resistance and robust thermal performance in compact surface-mount layouts. The logic-level gate drive simplifies interface with standard microcontrollers or drivers. Evaluate thermal management strategies based on the 175 °C junction limit and power dissipation ratings. Consider the avalanche energy rating for inductive load protection requirements.
Part Context
This device belongs to Nexperia's portfolio of N-channel MOSFETs designed for automotive and industrial markets. It employs TrenchMOS technology to achieve low conduction losses within the LFPAK33 footprint. The product line emphasizes reliability through automotive qualification standards, targeting applications where space constraints and thermal efficiency are critical design parameters.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Verify pin compatibility and electrical parameter equivalence before implementation.
