BUK9M43-100EX

Overview

The Nexperia BUK9M43-100EX is an N-channel logic level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (Power33) surface-mount package. It features a drain-source voltage rating of 100 V and a maximum continuous drain current of 25 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 43 mΩ at VGS = 5 V and ID = 5 A. Designed for high-performance automotive applications, it meets the AEC-Q101 standard and supports junction temperatures up to 175 °C.

Feature Summary

• Logic-level gate operation with a threshold voltage greater than 0.5 V at 175 °C
• Qualified for repetitive avalanche energy ratings
• Suitable for thermally demanding environments due to 175 °C junction temperature capability

Applications

• 12 V, 24 V and 48 V automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify that the ordering suffix 'EX' corresponds to the specific tape-and-reel packaging variant defined by Nexperia. Confirm the component status as production data sheet information before initiating designs. Ensure compatibility with the LFPAK33 footprint dimensions provided in the package outline section during PCB layout.

Selection Notes

Select this component for circuits requiring low conduction losses and robust thermal handling in automotive environments. The logic-level gate drive simplifies interface with standard microcontrollers or drivers. Evaluate the repetitive avalanche rating if the application involves inductive load switching without external clamping diodes.

Part Context

This device belongs to the BUK9M series of N-channel MOSFETs from Nexperia, characterized by TrenchMOS technology. The LFPAK33 package provides enhanced thermal dissipation compared to traditional plastic packages, supporting higher power densities in compact designs.

Replacement Considerations

BUK9M43-100E