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The BUK9M48-80L is a logic level N-channel MOSFET utilizing Trench12 technology in an LFPAK33 (SOT1210) package. It features an 80 V drain-source voltage rating and a maximum on-state resistance of 48 mΩ at VGS = 10 V. The device supports a continuous drain current of 15 A and total power dissipation of 50 W. Qualified to the AEC-Q101 standard, it operates with junction temperatures up to 175 °C and includes side-wettable flanks for enhanced solder joint reliability.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the component meets the required AEC-Q101 qualification standards for the intended automotive application environment before finalizing procurement specifications.
Select this component for designs requiring logic-level gate compatibility and high thermal performance. The LFPAK33 package provides low thermal resistance suitable for dense PCB layouts. Ensure the operating junction temperature remains within the specified 175 °C limit to maintain the rated electrical performance and longevity.
This part belongs to Nexperia's BUK9M series of N-channel MOSFETs designed for high-performance automotive applications. The series utilizes advanced Trench12 technology to achieve low conduction losses and fast switching speeds. These devices are engineered to meet stringent automotive reliability standards while offering compact surface-mount solutions.
Consult the official Nexperia replacement guide for verified substitute part numbers. Ensure any alternative device matches the LFPAK33 footprint, pinout configuration, and AEC-Q101 qualification requirements.