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The BUK9M4R3-40HX is an automotive qualified logic level N-channel MOSFET utilizing Trench 9 superjunction technology within an LFPAK33 (SOT1210) package. It features a drain-source voltage of 40 V and a maximum on-state resistance of 4.3 mΩ at VGS = 10 V and ID = 25 A. The device supports a continuous drain current of 95 A at a mounting base temperature of 25 °C, with a total power dissipation rating of 90 W under the same conditions. It operates across a junction temperature range of -55 °C to +175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets all required AEC-Q101 qualification standards for the intended automotive application environment. Cross-reference the marking code '94H340' with the datasheet to validate authenticity upon receipt.
Select this component for designs requiring logic level gate drive compatibility and high thermal performance in compact spaces. The LFPAK33 package offers gull wing leads suitable for automated optical inspection. Ensure the PCB thermal design can support the specified power dissipation limits when operating near the maximum junction temperature threshold.
This part belongs to Nexperia's BUK9M series of N-channel MOSFETs designed for automotive use. It employs advanced Trench 9 TrenchMOS technology to achieve superior conduction efficiency compared to standard planar devices. The LFPAK33 package is specifically engineered to provide improved thermal management and mechanical stability for surface mount assembly processes.
Consult the official Nexperia replacement guide for verified substitutes. Ensure any alternative maintains identical pinout configurations and meets the same AEC-Q101 automotive qualification requirements.