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The BUK9M67-60ELX is a single N-channel logic level MOSFET in an LFPAK33 (SOT1210) package. It features Enhanced SOA technology and is qualified to AEC-Q101 for automotive use at 175 °C. Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 20 A, and typical on-state resistance of 44 mΩ. The device supports a total power dissipation of 45 W and operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific suffix 'EX' against the manufacturer's official ordering information to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the component meets the required AEC-Q101 qualification standards for the intended automotive application environment before finalizing procurement.
Select this component for designs requiring enhanced safe operating area performance in linear mode applications. The LFPAK33 package offers superior thermal management compared to standard plastic packages. Verify that the gate drive voltage aligns with the logic level requirements for optimal RDS(on) performance.
This part belongs to Nexperia's automotive-grade MOSFET portfolio utilizing TrenchMOS technology. The LFPAK33 package is designed for surface-mount applications requiring high current density and low thermal resistance. The product is specifically engineered to meet the rigorous reliability standards of the automotive industry.
Consult the official Nexperia replacement guide for verified substitute part numbers. Do not assume pin compatibility or electrical equivalence with other N-channel MOSFETs without reviewing the specific datasheet parameters.
Yes, the device is fully automotive qualified to AEC-Q101 and designed for use in linear mode in airbag applications.
It uses Application specific (ASFET) Enhanced SOA technology to improve linear mode performance.