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The BUK9MJJ-65PLL,518 is a dual N-channel logic level MOSFET from Nexperia's TrenchPLUS series. It features a 65V drain-source voltage rating and supports a continuous drain current of 11.6A. Packaged in a 20SO surface-mount housing, the device offers a maximum power dissipation of 4.4W at case temperature. Key electrical characteristics include a gate-source threshold voltage of 1.4V and a gate charge of 6nC. The component operates within a temperature range of -55°C to +175°C.
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Select this component when a dual N-channel solution is required in a small footprint. The 65V rating suits low-voltage applications. Ensure the thermal design accommodates the 4.4W dissipation limit. Compare against single-channel alternatives if space permits lower part counts.
This part belongs to the TrenchPLUS family, utilizing advanced trench gate technology. It is designed for high-efficiency switching in power electronics. The 20SO package provides a balance between thermal performance and board space efficiency compared to larger packages.
Direct substitutes may include other dual N-channel MOSFETs in 20SO packages with similar voltage and current ratings. Verify pin compatibility and thermal resistance values before substitution.