BUK9MJT-55PRF,518

Description：MOSFET 2N-CH 55V 20SO
Series：-

SKU:73138b3d751f Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 55V 20SO
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：55V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：13.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：20-SOIC (0.295", 7.50mm Width)
Supplier Device Package：20-SO
Grade：-
Qualification：-

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BUK9MJT-55PRF,518

Overview

The BUK9MJT-55PRF,518 is a dual N-channel enhancement mode field-effect power transistor manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology to achieve very low on-state resistance within a 20-SOIC surface-mount package. This component is designed for efficient power switching applications, offering robust performance characteristics suitable for modern electronic designs requiring compact form factors and high reliability.

Feature Summary

Dual N-channel configuration in a single surface-mount package
TrenchMOS technology for low on-state resistance
Enhancement mode operation for standard logic control

Applications

DC-to-DC conversion circuits
Motor load switching
Solenoid control systems

Procurement Notes

Verify the specific suffix '518' against official Nexperia documentation to confirm tape-and-reel specifications and lot traceability. Ensure compatibility with 20-SOIC footprint requirements during PCB layout. Cross-reference the datasheet revision date to validate current electrical parameters before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a compact 20-SOIC package. The TrenchMOS technology provides efficiency advantages over standard planar devices. Consider thermal management requirements associated with the plastic package type for high-current applications.

Part Context

This device belongs to Nexperia's portfolio of power transistors utilizing advanced trench gate technology. It serves as a discrete solution for integrated power switching needs, distinct from monolithic ICs. The product line emphasizes automotive-grade reliability standards and energy-efficient switching capabilities.

Replacement Considerations

Consult official Nexperia substitution guides for direct pin-compatible alternatives. Verify that any substitute maintains the 55V drain-source voltage rating and dual-channel architecture. Ensure thermal resistance characteristics match the original design constraints.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.